IMZ120R090M1H INFINEON N Channel Mosfet Diode 1200 V 26A Tc 115W Tc Hrough Hole PG-TO247-4-1

Brand Name : Infineon Technologies

Model Number : IMZ120R090M1H

Certification : RoHS

Place of Origin : United States

MOQ : 30 PCS

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T

Supply Ability : 18K PCS

Delivery Time : 2-3 DAYS

Packaging Details : 30 PCS/Tube

Category : Single FETs, MOSFETs

Mfr : Infineon Technologies

Series : CoolSiC

Product Status : Active

FET Type : N-Channel

Technology : SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss) : 1200 V

Current - Continuous Drain (Id) @ 25°C : 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 15V, 18V

Rds On (Max) @ Id, Vgs : 117mOhm @ 8.5A, 18V

Vgs(th) (Max) @ Id : 5.7V @ 3.7mA

Gate Charge (Qg) (Max) @ Vgs : 21 nC @ 18 V

Vgs (Max) : +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds : 707 pF @ 800 V

Power Dissipation (Max) : 115W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : PG-TO247-4-1

Package / Case : TO-247-4