IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

Brand Name : Infineon Technologies

Model Number : IPP65R110CFDA

Certification : RoHS

Place of Origin : United States

MOQ : 50 PCS

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T

Supply Ability : 6K PCS

Delivery Time : 2-3 DAYS

Packaging Details : 50 PCS/Tube

Category : Single FETs, MOSFETs

Mfr : Infineon Technologies

Series : Automotive, AEC-Q101, CoolMOS™

Product Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 650V

Current - Continuous Drain (Id) @ 25°C : 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id : 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs : 118 nC @ 10 V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3240 pF @ 100 V

Power Dissipation (Max) : 277.8W (Tc)

Operating Temperature : -40°C ~ 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : PG-TO220-3